The hottest third-generation semiconductor materia

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The third-generation semiconductor materials have entered the stage of group war

the third-generation semiconductor materials have become a hot spot at present. The market is optimistic about the advantages of the third-generation semiconductor materials in the future, but due to the high cost, mass production is difficult. In order to speed up the technical and production breakthroughs of adum1200brz, it is difficult to fight alone. All parties have entered the stage of group war, and the sooner they can improve the yield, reduce the cost, and enter mass production, The sooner we can enjoy this promising market pie

global semiconductor manufacturers have stepped into the third generation of semiconductor materials and have carried out many cooperation, strategic alliances or mergers, including the acquisition of norstel AB by IDM manufacturer Italy France semiconductor, the acquisition of siltectra by exagan and Infineon of France, and the acquisition of sicrystal by Rohm of Japan; Manufacturers in Taiwan, China are also competing for the third generation of semiconductor materials. In the first half of this year, TSMC and Italian French semiconductor are the most representative. This time, the strategy of silicon wafer giant ring spherulite and macro Jieke private equity, to integrate the ability of upstream and downstream industrial chains to achieve complementarity, speed up the development steps and bottlenecks, and fight a group war is faster than fighting alone to obtain the market

the difficulty of gallium nitride is the challenge of lattice silicon carbide seed and long crystal.

at present, the proportion of third-generation semiconductor materials is still quite low, and the difficulty of mass production is still the biggest challenge. The bottleneck of the development of gallium nitride is still in the substrate section, resulting in the high cost and insufficient supply of gallium nitride, which is mainly due to the mismatching of the crystal of gallium nitride growing on silicon. 2. The protection precautions of the electrohydraulic servo universal experimental machine are not matched, and the difficulty is high. The other difficulty is that potassium nitride products are easy to warp, so the substrate should also be specially manufactured. If it will warp up, it is very difficult to reverse grow gallium nitride on silicon first

in terms of the production difficulty of silicon carbide, including the source of long crystal, the source of crystal seed requires quite high purity and difficult to obtain. In addition, the time of long crystal is quite long and the monitoring temperature and process of long crystal process are difficult. The third is that it takes two weeks for silicon carbide to grow a crystal rod, and the result may be only 3 cm, resulting in the difficulty of mass production

price is still the biggest key to popularity after identification

the global silicon-based semiconductor material market is about US $450billion, of which the third-generation semiconductor only accounts for us $1billion, and the proportion is still quite low, but the future growth rate is still large, but the key to commercialization is that the price should decline rapidly, at least 50% cheaper than the current price, and the market acceptance will be improved

as for the development pace of various countries, including the United States, Japan, and the European Union, they all want to establish technology, and compound semiconductors are also widely used in the military, and they are also key materials in high-power high-speed vehicles. Therefore, they are regarded as strategic materials by various countries, and semi insulated compound semiconductors can be exported only after obtaining certificates. They are quite important upstream materials

as for the take-off time of the overall market, the market originally believed that with the help of 5g and electric vehicles, there would be a quantity of third-generation semiconductor materials in 2020, but this year, affected by the COVID-19, the entire vehicle market was in chaos, and 5g construction was also affected. It is estimated that there will be a large quantity in the second half of 2021, and the fastest application is power related products, but 5g and electric vehicles are still important driving forces to support the market in the future

current situation of third-generation semiconductors in Chinese Mainland

in terms of technology, SiC substrate and epitaxy are still dominated by 4 inches in China, and 6-inch products have been developed and supplied in small quantities; Gan substrates produced in batch in China are still mainly 2 inches. Domestic 600 ~ 3300v SiC Schottky diode technology is relatively mature, and the industrialization degree continues to improve. At present, 1200 ~ 1700V SiC metal oxide half effect transistor (MOSFET) devices have also been developed, but the reliability is low, with an increase of 1% compared with the same period in 2012 It was in the stage of small batch production before; Domestic full SiC Power module, the main indicators are 1200v/50 ~ 600A, 650v/900a. In terms of GaN high electron mobility transistors (HEMTs), China launched 650v/10 ~ 30A Gan transistor products in 2018; In terms of Gan microwave RF devices, domestic Gan RF amplifiers have been successfully applied to base stations, and sub 6 GHz and millimeter wave Gan RF power amplifiers have also been mass produced

in terms of industry, domestic independent innovation and development is the only way to go under the situation that semiconductor foreign investment is blocked. In 2018, with the dual support of policies and funds, three SiC production lines were added in the third generation semiconductor field in China. In terms of investment, Gan is more popular. According to the incomplete statistics of the third generation semiconductor industry technology innovation strategic alliance (CASA), but the verticality provided by the closure is greater. In 2018, there were 8 large investment and production expansion projects in the related fields of the third generation semiconductor in China, of which 4 were related to Gan materials, involving an amount of 22billion yuan. In addition, compared with the upsurge of mergers and acquisitions of international enterprises, there were only two domestic mergers and acquisitions in 2018

in terms of production mode, the mainland has formed a complete industrial chain system from substrate to module in the field of third-generation semiconductor power electronic devices. In terms of device manufacturing, IDM mode is the main mode, and a division of labor system of "design manufacturing packaging and testing" is being formed; The OEM production line in the mainland is still under construction and has not yet formed a stable mass production

in terms of regions, the development of China's third-generation semiconductor industry has initially formed five key development regions: Beijing Tianjin Hebei, Yangtze River Delta, Pearl River Delta, Fujian Delta and central and Western China. Among them, the agglomeration effect of Yangtze River Delta is prominent, accounting for 64% of the total investment from the second half of 2015 to the end of 2018. In addition, Beijing, Shenzhen, Xiamen, Quanzhou, Suzhou and other representative cities are stepping up deployment, taking multiple measures at the same time, and advancing in an orderly manner

generally speaking, China's third-generation semiconductor technology and industry have made good progress, but there is still a certain gap with the foreign advanced level in terms of material indicators and device performance. The market continues to be occupied by international giants, and there is an urgent need for localization

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